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This device requires the presence of omni-polar magnetic fields for operation.

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MH 248 Hall-effect sensor is a temperature stable, stress-resistant, micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization.
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MH 248 Hall-effect sensor is a temperature stable, stress-resistant, micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH 248 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, and a short circuit protected open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation. MH 248 is rated for operation between the ambient temperatures 40 C and + 85 C for the E temperature range. The four package styles available provide magnetically optimized solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height),sq is an QFN2020-3(0.5 mm nominal height),tsot-23 is an ST(0.7 mm nominal height),a miniature low-profile surface-mount package, while package UA is a three-lead ultra-mini SIP for through-hole mounting. The package type is in Halogen free version verified by a third party Lab. Features and Benefits CMOS Hall IC Technology Solid-State Reliability Micro power consumption for battery-powered applications Omni polar, output switches with absolute value of North or South pole from magnet Operating voltage Min. 2.5V, Max 3.5V High Sensitivity for direct reed switch replacement applications Multiple small package options Custom sensitivity selections are available in optional packages. Pb Free/Green chip qualified by a third party lab. Applications Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set) Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications Page 1 of 14 Rev. 1.16 Ordering Information XX XXXX X XX X Sorting Code Package Type α,β,blank.. UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23, SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin), SS:TSOT-26,SD:DFN-6 Temperature Code E: 85 O C, I: 105 O C K: 125 O C, L: 150 O C Part Number 181,182,185,186,187,189,281,282,248,249 If part # is just 3 digits, the forth digit will be omitted. Company Name/Product Category MH ( Magnesensor Technology Hall Effect Product) MP: (Magnesensor Technology Power Product) Part No. Temperature Suffix Package Type MH248EUA E (-40 to + 85 ) UA (TO-92S) MH248ESO E (-40 to + 85 ) SO (SOT-23) MH248EST E (-40 to + 85 ) ST (TSOT-23) MH248ESQ E (-40 to + 85 ) SQ (QFN2020-3) MH248ESO-α E (-40 to + 85 ) SO (SOT-23) MH248ESO-β E (-40 to + 85 ) SO (SOT-23) MH248ESO-γ E (-40 to + 85 ) SO (SOT-23) Custom sensitivity selection is available. Functional Diagram Note: Static sensitive device; please observe ESD precautions. Reverse V DD protection is not included. For reverse voltage protection, a 100Ω resistor in series with V DD is recommended Page 2 of 14 Rev. 1.16 Absolute Maximum Ratings At (Ta=25 C) Characteristics Values Unit Supply voltage,(vdd) 5 V Out voltage, (VOUT) 5 V Reverse voltage, (VDD) (VOUT) -0.3 V Magnetic flux density Unlimited Gauss Output current(iout) 2 ma Operating temperature range, (Ta) -40 to +85 C Storage temperature range, (Ts) -55 to +150 C Maximum Junction Temp,(Tj) 150 C Thermal Resistance (θja) UA / SO / ST / SQ 206 / 543 / 310 / 543 C / W (θjc) UA / SO / ST /SQ 148 / 410 / 223 / 410 C / W Package Power Dissipation, (PD) UA / SO / ST / SQ 606 / 230 / 400 / 230 mw Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum- rated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters Ta=25 C, VDD=3.0V (Unless otherwise specified) Parameters Test Conditions Min Typ Max Units Supply Voltage,(VDD) Operating Volts Supply Current,(IDD) Awake State ma Sleep State µa Average µa Output Leakage Current,(Ioff) Output off 1 ua Output Low Voltage,(VSAT) IOUT=1mA 0.3 V Awake mode time,( Taw) Operating 70 us Sleep mode time,( TSL) Operating 70 ms Duty Cycle,(D,C) 0.1 % Typical Application circuit C1:10nF C2:100pF R1:100KΩ Page 3 of 14 Rev. 1.16 MH248E UA/SQ Magnetic Specifications DC operating parameters: T A = 25, V DD =3.0 V DC (unless otherwise specified). Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Release B OPS S pole to branded side, B BOP, Vout On 6 60 Gauss B OPN N pole to branded side, B BOP, Vout On Gauss B RPS S pole to branded side, B BRP, Vout Off 5 59 Gauss B RPN N pole to branded side, B BRP, Vout Off Gauss Hysteresis B HYS BOPx - BRPx 7 Gauss MH248E SO/ST Magnetic Specifications DC operating parameters: T A = 25, V DD =3.0 V DC (unless otherwise specified). Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Release B OPS N pole to branded side, B BOP, Vout On 6 60 Gauss B OPN S pole to branded side, B BOP, Vout On Gauss B RPS N pole to branded side, B BRP, Vout Off 5 59 Gauss B RPN S pole to branded side, B BRP, Vout Off Gauss Hysteresis B HYS BOPx - BRPx 7 Gauss MH248ESO-α Magnetic Specifications DC operating parameters: T A = 25, V DD =3.0 V DC (unless otherwise specified). Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Release B OPS N pole to branded side, B BOP, Vout On Gauss B OPN S pole to branded side, B BOP, Vout On Gauss B RPS N pole to branded side, B BRP, Vout Off 39 Gauss B RPN S pole to branded side, B BRP, Vout Off -59 Gauss Hysteresis B HYS BOPx - BRPx 7 Gauss MH248ESO-β Magnetic Specifications DC operating parameters: T A = 25, V DD =3.0 V DC (unless otherwise specified). Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Release B OPS N pole to branded side, B BOP, Vout On Gauss B OPN S pole to branded side, B BOP, Vout On Gauss B RPS N pole to branded side, B BRP, Vout Off 59 Gauss B RPN S pole to branded side, B BRP, Vout Off -59 Gauss Hysteresis B HYS BOPx - BRPx 7 Gauss Page 4 of 14 Rev. 1.16 MH248ESO-γ Magnetic Specifications DC operating parameters: T A = 25, V DD =3.0 V DC (unless otherwise specified). Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Release B OPS N pole to branded side, B BOP, Vout On Gauss B OPN S pole to branded side, B BOP, Vout On Gauss B RPS N pole to branded side, B BRP, Vout Off 34 Gauss B RPN S pole to branded side, B BRP, Vout Off -59 Gauss Hysteresis B HYS BOPx - BRPx 7 Gauss MH248E UA / SO / ST / SQ Output Behavior versus Magnetic Polar DC Operating Parameters Ta = -40 to 85, Vdd =2.5V to 3.5V Parameter Test condition OUT(UA,SO,ST,SQ) South pole B Bop[(-60)~(-6)] Low Null or weak magnetic field B=0 or B BRP Open(Pull-up Voltage) North pole B Bop(60~6) Low MH248ESO-α Output Behavior versus Magnetic Polar DC Operating Parameters Ta = -40 to 85, Vdd =2.5V to 3.5V Parameter Test condition OUT(ESO-α) South pole B Bop[(-60)~(-6)] Low Null or weak magnetic field B=0 or B BRP Open(Pull-up Voltage) North pole B Bop(21~40) Low MH248ESO-β Output Behavior versus Magnetic Polar DC Operating Parameters Ta = -40 to 85, Vdd =2.5V to 3.5V Parameter Test condition OUT(SO-β) South pole B Bop[(-60)~(-6)] Low Null or weak magnetic field B=0 or B BRP Open(Pull-up Voltage) North pole B Bop(30~60) Low MH248ESO-γ Output Behavior versus Magnetic Polar DC Operating Parameters Ta = -40 to 85, Vdd =2.5V to 3.5V Parameter Test condition OUT(ESO-γ) South pole B Bop[(-60)~(-6)] Low Null or weak magnetic field B=0 or B BRP Open(Pull-up Voltage) North pole B Bop(12~35) Low Page 5 of 14 Rev. 1.16 SO/ST package SQ package UA package High State High State Low State ts Vol in ge olta tv utpu O Low State Performance Graphs BOPN BRPN BRPS BOPS 0 Vsat Magnetic Flux Density in Gauss Typical Supply Voltage(VDD) Versus Flux Density Typical Temperature(TA) Versus Flux Density Flux Density(Gauss) BOPS BOPN BRPS BRPN Flux Density(Gauss) BOPS BOPN BRPS BRPN Supply Voltage(V) Temperature( ) Typical Temperature(TA) Versus Supply Current(IDD) Current Consumpion Sleep Current(uA) Awarke Current(mA) Average Current(uA) Temperature( ) Typical Supply Voltage(VDD) Versus Supply Current(IDD) Current Consumpion Sleep Current(uA) Awarke Current(mA) Average Current(uA) Supply Voltage(V) Page 6 of 14 Rev. 1.16 Typical Supply Voltage(VDD) Versus Output Voltage(VDSON) Typical Temperature(TA) Versus Output Voltage(VDSON) Output Saturation Voltage (mv) Output Saturation Voltage (mv) Supply Voltage(V) Temperature( ) Typical Supply Voltage(VDD) Versus Leakage Current(IOFF) Power Dissipation versus Temperature(TA) 700 UA Package Output Leakage Current(uA) Package power Dissipation(mW SO/SQ Package Rθja = 543 /w Rθja = 206 /w ST Package Rθja = 310 /w Supply Voltage(V) Temperature( Package Power Dissipation The power dissipation of the Package is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, R θja, the thermal resistance from the device junction to ambient, and the operating temperature, Ta. Using the values provided on the data sheet for the package, PD can be calculated as follows: P D T = J(max) R θ ja -Ta The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature Ta of 25 C, one can calculate the power dissipation of the device which in this case is 606 milliwatts Page 7 of 14 Rev. 1.16 (Package Power Dissipation continued) 150 C - 25 C P (UA) = 206 C/ D = W 606mW The 206 C/W for the UA package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 606 milliwatts. There are other alternatives to achieving higher power dissipation from the Package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. Sensor Location, Package Dimension and Marking MH 248 Package UA Package Hall Chip location 248 XXX NOTES: 1).Controlling dimension: mm 2).Leads must be free of flash and plating voids 3).Do not bend leads within 1 mm of lead to package interface. 4).PINOUT: Pin 1 Pin 2 Pin 3 VDD GND Output Output Pin Assignment (Top view) Page 8 of 14 Rev. 1.16 SO Package (Top View) Hall Plate Chip Location (Bottom view) 3 248XX 1 2 NOTES: 1. PINOUT (See Top View at left :) Pin 1 Pin 2 Pin 3 V DD Output GND 2. Controlling dimension: mm 3. Lead thickness after solder plating will be 0.254mm maximum ST Package (TSOT-23) (Top View) Hall Plate Chip Location (Bottom view) NOTES: 1. PINOUT (See Top View at left:) Pin 1 VDD Pin 2 Output Pin 3 GND 2. Controlling dimension: mm; Page 9 of 14 Rev. 1.16 SQ Package 248 XX NOTES: 3. PINOUT (See Top View at left) Pin 1 Pin 2 Pin 3 VDD Output GND 4. Controlling dimension: mm; 5. Chip rubbing will be 10mil maximum; 6. Chip must be in PKG. center. Hall Plate Chip Location (Top view) MH 248 (TO-92S) Package Date Code X X X Year Week EX:2013 Year_8 Week 308 MH 248 SO(SOT-23)/MH248ST(TSOT-23)/MH 248SQ(QFN2020-3) Package Date Code X X Week Code EX:2010 Year_8 Week KH Page 10 of 14 Rev. 1.16 week code QA QB QC QD QE QF QG QH QI QJ QK QL QM week code QN QO QP QQ QR QS QT QU QV QW QX QY QZ week code RA RB RC RD RE RF RG RH RI RJ RK RL RM week code RN RO RP RQ RR RS RT RU RV RW RX RY RZ EX:2013 Year_8 Week QH SOT-23 & TSOT-23 package Tape On Reel Dimension 4 NOTES: 1. Material: Conductive polystyrene; 2. DIM in mm; sprocket hole pitch cumulative tolerance ±0.2; 4. Camber not to exceed 1mm in 100mm; 5. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole; 6. (S.R. OHM/SQ) Means surface electric resistivity of the carrier tape Page 11 of 14 Rev. 1.16 QFN Tape On Reel Dimension NOTES: 7. Material: Conductive polystyrene; 8. DIM in mm; sprocket hole pitch cumulative tolerance ±0.2; 10. Camber not to exceed 1mm in 100mm; 11. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole; 12. (S.R. OHM/SQ) Means surface electric resistivity of the carrier tape. IR reflow curve Lead Temperature (Soldering Soldering, /10 sec) 255 ± 5 10 ± 1 sec ture pera Tem Room 2 ~5 / se c 150 ± ± 30 sec 2 ~5 / sec SECOND SO/ST/SQ Soldering Condition Page 12 of 14 Rev. 1.16 UA Soldering Condition Packing specification: Package Bag Box Carton TO-92S-3L 1,000pcs/bag 10bags/box 8 boxes/carton SOT-23-3L 3,000pcs/reel 10 reels/box 2boxes/carton TSOT-23-3L 3,000pcs/reel 10 reels/box 2boxes/carton QFN ,000pcs/reel 10 reels/box 2boxes/carton TO-92S-3L Weight SOT-23-3L TSOT-23-3L Weight QFN Weight 1000pcs/bag 0.11kg 3000pcs/reel 0.18kg 3000pcs/reel 0.13kg 10 bags/box 1.24kg 10 reels/box 1.99kg 10 reels/box 1.40kg 8 boxes/carton 10.09kg 2 boxes/carton 4.9kg 2boxes/carton 3.70kg Page 13 of 14 Rev. 1.16 Inner box label:size: 3.4cm*6.4cm Bag and inner box Halogen Free Label Carton label:size: 5.6 cm * 9.8 cm Bag and inner box Halogen Free Label Combined lots: When lots are combined, one reel could have two D/C and no more than two DC. One carton could have two devices, no more than two Page 14 of 14 Rev. 1.16
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