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AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.11 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

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Features Advanced Process Technology Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE
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Features Advanced Process Technology Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 75 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. V DSS 55V R DS(on) typ. 5.8m I D (Silicon Limited) I D (Package Limited) D HEXFET Power MOSFET max. G D-Pak 7.5m 9A 42A G D S Gate Drain Source S Base part number Package Type D-Pak Standard Pack Form Quantity Orderable Part Number Tube 75 Tape and Reel Left 3 TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 9 I T C = C Continuous Drain Current, V V (Silicon Limited) 65 I T C = 25 C Continuous Drain Current, V V (Package Limited) 42 A I DM Pulsed Drain Current 36 P C = 25 C Maximum Power Dissipation 4 W Linear Derating Factor.9 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy (Thermally Limited) E AS (Tested) Single Pulse Avalanche Energy Tested Value 22 mj I AR Avalanche Current See Fig.5,6, 2a, 2b A E AR Repetitive Avalanche Energy mj T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 3 Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case. R JA Junction-to-Ambient ( PCB Mount) 5 C/W R JA Junction-to-Ambient HEXFET is a registered trademark of Infineon. *Qualification standards can be found at T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.5 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance m V GS = V, I D = 42A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = µa gfs Forward Trans conductance 3 S V DS = 25V, I D = 42A I DSS Drain-to-Source Leakage Current 2 V µa DS = 55 V, V GS = V 25 V DS = 55V,V GS = V,T J =25 C Gate-to-Source Forward Leakage 2 V I GSS na GS = 2V Gate-to-Source Reverse Leakage -2 V GS = -2V Dynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge I D = 42A Q gs Gate-to-Source Charge 7 nc V DS = 44V Q gd Gate-to-Drain Charge 23 V GS = V t d(on) Turn-On Delay Time 7 V DD = 28V t r Rise Time 76 I D = 42A ns t d(off) Turn-Off Delay Time 42 R G = 7.6 t f Fall Time 48 V GS = V Between lead, L D Internal Drain Inductance 4.5 6mm (.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 284 V GS = V C oss Output Capacitance 47 V DS = 25V C rss Reverse Transfer Capacitance 25 ƒ =.MHz pf C oss Output Capacitance 63 V GS = V, V DS =.V ƒ =.MHz C oss Output Capacitance 36 V GS = V, V DS = 44V ƒ =.MHz C oss eff. Effective Output Capacitance 56 V GS = V, V DS = V to 44V Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 42 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 36 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V T J = 25 C,I S = 42A,V GS = V t rr Reverse Recovery Time ns T J = 25 C,I F = 42A, V DD = 28V Q rr Reverse Recovery Charge 2 3 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. ) Limited by T Jmax, starting T J = 25 C, L =.3mH, R G = 25, I AS = 42A, V GS =V. Part not recommended for use above this value. Pulse width.ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS Limited by T Jmax, see Fig.2a, 2b, 5, 6 for typical repetitive avalanche performance. This value determined from sample failure population. % tested to this value in production. When mounted on square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at T J approximately 9 C I D, Drain-to-Source Current ) G fs, Forward Transconductance (S) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics 2 T J = 25 C T J = 75 C 8 T J = 75 C 6 T J = 25 C 4. V DS = 25V 6µs PULSE WIDTH V DS = V 38µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Trans conductance Vs. Drain Current I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) 5 4 V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 6 I D = 42A V DS = 44V VDS= 28V VDS= V 3 C iss C oss 4 C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage. OPERATION IN THIS AREA LIMITED BY R DS (on).. T J = 75 C µsec msec. T J = 25 C V GS = V V SD, Source-to-Drain Voltage (V). Tc = 25 C Tj = 75 C Single Pulse msec DC V DS, Drain-toSource Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) LIMITED BY PACKAGE 2.5 I D = 42A V GS = V T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Normalized On-Resistance Vs. Temperature D =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) J J Ci= i Ri Ci= i Ri R R 2 R 3 R R 2 R 3 E-6 E t, Rectangular Pulse Duration (sec) C C Ri ( C/W) i (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) 5V V DS R G 2V tp L D.U.T I AS. DRIVER + - V DD A I D TOP 7.6A A BOTTOM 42A Fig 2a. Unclamped Inductive Test Circuit tp V (BR)DSS Starting T J, Junction Temperature ( C) I AS Fig 2c. Maximum Avalanche Energy vs. Drain Current Fig 2b. Unclamped Inductive Waveforms Vds Vgs Id I D =.ma I D = 25µA I D = µa 3. Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 3a. Gate Charge Waveform T J, Temperature ( C ) Fig 4. Threshold Voltage Vs. Temperature Fig 3b. Gate Charge Test Circuit E AR, Avalanche Energy (mj) Duty Cycle = Single Pulse Avalanche Current (A)..5. Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses..e-6.e-5.e-4.e-3.e-2.e- tav (sec) Fig 5. Typical Avalanche Current Vs. Pulse width Notes on Repetitive Avalanche Curves, Figures 5, 6: TOP Single Pulse BOTTOM % Duty Cycle I D = 42A Starting T J, Junction Temperature ( C) Fig 6. Maximum Avalanche Energy Vs. Temperature (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 2a, 2b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 5, 6). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see Figures 3) P D (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av Fig 7. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number IR Logo AUFRZ YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-48 & EIA INCH NOTES :. OUTLINE CONFORMS TO EIA mm Note: For the most current drawing please refer to IR website at Qualification Information Automotive (per AEC-Q) Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level D-Pak MSL Machine Model Class M4 (+/- 7V) AEC-Q-2 ESD Human Body Model Class HC (+/- 5V) AEC-Q- Charged Device Model Class C5 (+/- 2V) AEC-Q-5 RoHS Compliant Yes Highest passing voltage. Revision History Date Comments Updated datasheet with corporate template /9/25 Corrected ordering table on page. Corrected RthJA (PCB mount) typo from 4 C/W to 5 C/W on page. Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 25 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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